SICDS100V6
Current Sensors
Parameters Table
PARAMETERS
SYMBOL
UNIT
Electrical data
V
VALUE
CONDITIONS
Supply voltage(±5%)
Current consumption
Secondary nominal r.m.s.
current
VC
IC
±12…15
mA
10(@±15)+Is
ISN
mA
50
@IPN
Conversion ratio
KN
1:2000
Accuracy - Dynamic performance data
Linearity
Accuracy
εL
%
<±0.15
@ IPN , VC = ±15V, TA =
25°C
<±0.45
XG
%
@ IPN , VC = ±12…15V,
TA = 25°C
<±0.70
<±0.10
Offset current
IO
mA
mA
@ IP = 0,TA = 25°C
Typ
Max
±0.30
±0.50
Thermal drift of Io
IOT
±0.05
±0.10
@ IP = 0,-25°C～+85°C
@ IP = 0,-40°C～-25°C
@ 90% of IPN step
Response time
tr
µS
<1
>200
di/dt accurately followed
Frequency bandwidth (1)
di/dt
BW
A/µS
kHz
DC~200
@-1dB
General data
Ambient operating temperature
Ambient storage temperature
Secondary coil resistance
TA
TS
Rs
℃
℃
Ω
-40 ~ +85
-40 ~ +90
120
@ TA = 70°C
@50Hz, 1 min
Isolation characteristics
R. m. s voltage for AC isolation
test
Vd
KV
KV
2.5
Impulse withstand voltage
1.2/50us
Vw
4.5
Creepage distance
Clearance distance
Comparative Tracking Index
dCp
dCI
CTI
mm
mm
5
5
175
Group IIIa
Notes:
1) DC can be measured 100A, and AC for 80A.
2) Please refer to derating curves in the technical file to avoid excessive core heating at high
frequency.
2
V2.00 May 1, 2012
SECELECTRONICS [ SEC Electronics Inc. ]
