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SS239KSOT 参数 Datasheet PDF下载

SS239KSOT图片预览
型号: SS239KSOT
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS全极高灵敏度微功耗霍尔开关 [CMOS Omnipolar High Sensitivity Micropower Hall Switch]
分类和应用: 开关
文件页数/大小: 8 页 / 239 K
品牌: SECELECTRONICS [ SEC Electronics Inc. ]
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SS239
CMOS Omnipolar High Sensitivity Micropower Hall Switch
Packages
Features and Benefits
Operation down to 2.5V
Micropower consumption for battery
powered applications
High sensitivity for direct reed switch
replacement applications
Omnipolar, output switches with absolute
value of North or South pole from magnet
3 pin SOT23 (suffix SO)
3 pin SIP (suffix UA)
 
Functional Block Diagram
Application Examples
Solid-state switch
Handheld Wireless Handset Awake Switch
Lid close sensor for battery powered devices
Magnet proximity sensor for reed switch
replacement in low duty cycle applications
 
Chopper stabilized amplifier
stage2.Description
The SS239 Omnipolar Hall effect sensor IC is fabricated
from mixed signal CMOS technology. It incorporates
advanced chopper-stabilization techniques to provide
accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall
element is evaluated against the predefined thresholds. If the flux density is above or below the B
OP
/B
RP
thresholds
then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been optimized for service in applications requiring extended operating
lifetime in battery powered systems.
The output transistor of the SS239 will be latched on (B
OP
) in the presence of a sufficiently strong South or North
magnetic field facing the marked side of the package. The output will be latched off (B
RP
) in the absence of a
magnetic field.
 
1
V2.10
May 1, 2012