SS732/SS632
Hall Latch - High Sensitivity
Pin Definitions and Description
SOT Pin
№
1
2
3
SIP Pin
№
1
3
2
Name
VDD
OUT
GND
Type
Supply
Output
Ground
Function
Supply Voltage pin
Open Drain Output pin
Ground pin
Detailed General Description
The S732 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly.
The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds the operate point
threshold, B
OP
. After turn-on, the output voltage is V
DSon
. Note that the device latches, that is, a south pole of sufficient strength
towards the branded surface of the device turns the device on. The device remains on if the south pole is removed (B→0). This
latching property defines the device as a magnetic memory.
When the magnetic field is reduced below the release point, BRP , the OUT pin turns off (goes high). The difference in the magnetic
operate and release points is the hysteresis, B
HYS
, of the device. This built-in hysteresis prevents output oscillation near the switching
point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise.
The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with
equivalent strength and opposite direction drive the output high and low.
Powering-on the device in the hysteresis region (less than B
OP
and higher than B
RP
) allows an indeterminate output state. The correct
state is attained after the first excursion beyond B
OP
or B
RP
.
The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence of a sufficiently
strong North pole magnetic field applied to the marked face.
Output level
OUT = High
OUT = High
Output level
B
HYS
B
HYS
OUT = Low
B
RP
-18Gs typ
OUT = Low
0mT
B
OP
18Gs typ
Flux density
B
RP
-18Gs typ
0mT
B
OP
18Gs typ
Flux density
UA package
- Latch characteristic
SO
package
- Latch characteristic
3
V2.00 May.1, 2012
SECELECTRONICS [ SEC Electronics Inc. ]
