2N4401
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Transistor
Plastic-Encapsulate Transistors
TO-92
4.55
±0.2
Features
Power Dissipation
MAXIMUM RATINGS* T
A
=25
o
C
unless otherwise noted
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
J
T
stg
R
θ
JA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
3.5
±0.2
4.5
±0.2
60
40
6
600
0.625
150
-55to +150
357
o
o
V
V
V
mA
W
o
o
14.3
±0.2
0.46
+0.1
–0.1
(1.27
Typ.)
1.25
–0.2
1 2 3
2.54
±0.1
+0.2
Symbol
Parameter
Value
Units
0.43
+0.08
–0.07
C
C
1: Emitter
2: Base
3: Collector
C /mW
ELECTRICAL CHARACTERISTICS ( Tamb=25
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
unless
otherwise
conditions
specified)
MIN
60
40
6
0.1
0.5
0.1
20
40
50
100
40
0.4
0.75
0.95
V
V
V
V
250
6.5
15
20
225
30
MHz
pF
nS
nS
nS
nS
300
MAX
UNIT
V
V
V
µA
µA
µA
Test
I
C
=100µA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
=100µA, I
C
=0
V
CB
=35V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
= 0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
= 10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
= 500mA
I
C
=150 mA, I
B
=15mA
I
C
=500 mA, I
B
=50mA
I
C
=150 mA, I
B
=15mA
I
C
=500 mA, I
B
=50mA
V
CE
= 10V, I
C
= 20mA,
f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
V
CC
=30V, V
BE
=2V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
= 15mA
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
t
d
t
r
t
S
t
f
Any changing of specification will not be informed individual
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