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2N4402 参数 Datasheet PDF下载

2N4402图片预览
型号: 2N4402
PDF下载: 下载PDF文件 查看货源
内容描述: PNP塑料封装晶体管 [PNP Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管放大器
文件页数/大小: 1 页 / 105 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2N4402
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.6 A, -40 V
PNP Plastic Encapsulated Transistor
FEATURES
General Purpose Amplifier Transistor
G
H
TO-92
Emitter
Base
Collector
D
J
A
Collector

B
K
REF.
A
B
C
D
E
F
G
H
J
K

Base
E
C
F

Emitter
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-40
-40
-5
-0.6
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
Min
-40
-40
-5
-
-
30
50
50
20
-
-
-0.75
-
-
-
150
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.1
-
-
150
-
-0.4
-0.75
-0.95
-1.3
8.5
30
-
Unit
V
V
V
μA
μA
Test Condition
I
C
= 0.1mA, I
E
= 0A
I
C
= -1mA, I
B
= 0A
I
E
= -0.1mA, I
C
= 0A
V
CB
= -40V, I
E
= 0 A
V
EB
= -4V, I
C
=0 mA
V
CE
= -1V, I
C
= -1mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
=-15mA
I
C
= -500mA, I
B
= -50mA
V
CB
= -10V, I
E
= 0A, f=1MHz
V
EB
= -0.5V, I
C
= 0A, f=1MHz
V
CE
= -10V, I
C
= -20mA, f=100MHz
DC Current Gain
h
FE
*
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector output Capacitance
Emitter input Capacitance
Transition Frequency
V
CE(sat)
*
V
BE(sat)
*
C
ob
C
ib
f
T
*
V
V
pF
pF
MHz
*Pulse test:Pulse Width
300
μs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Dec-2010 Rev. A
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