2N5550
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.6 A, 160 V
NPN Plastic Encapsulated Transistor
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max.600mA)
High voltage(max.160V)
TO-92
G
H
J
A
D
B
K
REF.
A
B
C
D
E
F
G
H
J
K
Collector
3
2
Base
E
C
F
1
Emitter
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
RATING
160
140
6
0.6
0.625
150, -55~150
UNIT
V
V
V
A
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
MIN
160
140
6
-
-
60
60
20
-
-
-
-
-
100
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
0.1
0.05
-
250
-
0.15
0.25
1
1.2
6
300
10
UNIT
V
V
µA
V
TEST CONDITION
I
C
=100µA, I
E
= 0A
I
C
=1mA, I
B
= 0A
I
E
=10µA, I
C
= 0A
V
CB
=100V, I
E
= 0 A
V
EB
=4 V, I
C
=0 mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
µA
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Collector Output Capacitance
Transition Frequency
Noise Figure
V
CE(sat)
V
BE(sat)
C
ob
f
T
NF
V
V
V
V
pF
MHz
dB
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
= 10V, I
E
= 0A, f=1MHz
V
CE
= 10V, I
C
= 10mA, f=100MHz
V
CE
=5V, I
C
= 0.25mA,
f=1KHz, R
S
=1k
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Mar-2010 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
