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2N6517 参数 Datasheet PDF下载

2N6517图片预览
型号: 2N6517
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑料封装晶体管 [NPN Plastic Encapsulated Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 131 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
   
2N6517
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.5 A, 350V
NPN Plastic Encapsulated Transistor
FEATURES
High Voltage Transistors
Complement of the 2N6520
G
H
TO-92
J
A
D
B
K
Emitter
Base
Collector
Collector
REF.
A
B
C
D
E
F
G
H
J
K


Base
E
C
F

Emitter
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, Junction to ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
350
350
6
500
0.625
200
150, -55~150
Unit
V
V
V
mA
W
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)
*
h
FE (2)
*
Min.
350
350
6
-
-
20
30
30
20
15
-
-
-
-
-
-
-
40
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.05
0.05
-
-
200
200
-
0.3
1.0
0.75
0.85
0.9
2
6
200
Unit
V
V
V
μA
μA
Test Conditions
I
C
=0.1mA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=0.01mA, I
C
=0
V
CB
=250V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
V
CE
=10V, I
C
=100mA
V
CB
=20V, I
E
=0A, f=1MHz
V
CE
=20V, I
C
=10mA, f=20MHz
DC Current Gain
h
FE (3)
*
h
FE (4)
*
h
FE (5)
*
Collector to Emitter Saturation Voltage
V
CE(sat)
*
V
Base to Emitter Saturation Voltage
Base to Emitter Voltage
Collector to Base Capacitance
V
BE(sat)
*
V
BE
*
C
ob
V
V
pF
MHz
Transition Frequency
f
T
*
*Pulse test:Pulse Width
300μ s, Duty Cycle
2.0
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
12-Jan-2011 Rev. A
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