2N6520
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.5 A, -350 V
PNP Plastic Encapsulated Transistor
FEATURES
High voltage transistors
G
H
TO-92
Collector
J
A
B
K
D
REF.
A
B
C
D
E
F
G
H
J
K
Base
Emitter
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal resistance, junction to ambient
Junction, Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
RATING
-350
-350
-5
-0.5
0.625
200
150, -55~150
UNIT
V
V
V
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
MIN
-350
-350
-5
-
-
20
30
TYP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-50
-50
-
-
200
200
-
-0.3
-0.35
-0.5
-1.0
-0.75
-0.85
-0.9
-2
6
80
200
UNIT
V
V
V
nA
nA
TEST CONDITION
I
C
= -100μA, I
E
= 0A
I
C
= -1mA, I
B
= 0A
I
E
= -10μA, I
C
= 0A
V
CB
= -250V, I
E
= 0 A
V
EB
= -4V, I
C
=0 mA
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
DC Current Gain
h
FE
*
30
20
15
-
-
-
-
-
Collector to Emitter Saturation Voltage
V
CE(sat)
*
V
Base to Emitter Saturation Voltage
Base to Emitter voltage
Collector-Base Capacitance
Emitter-Base Capacitance
V
BE(sat)
*
V
BE(on)
*
C
cb
C
eb
-
-
-
-
-
40
V
V
pF
pF
MHz
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
V
CE
= -10V, I
C
= -100mA
V
CB
= -20V, I
E
= 0A, f=1MHz
V
EB
= -0.5V, I
C
= 0A, f=1MHz
V
CE
= -20V, I
C
= -10mA, f=20MHz
Any changes of specification will not be informed individually.
Transition Frequency
f
T
*
*Pulse test：Pulse Width
≦
300
μs,
Duty Cycle
≦
2.0%.
http://www.SeCoSGmbH.com/
02-Sep-2010 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
