2N7000
200mA,60V,R
DS(ON)
6
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high
speed applications such as switching regulators,
converters, solenoid and relay drives.
SEATING
PLANE
D
TO-92
E
S1
A
b1
L
Drain
e1
e
b
C
REF.
Gate
Source
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
-Continuous
-Non-Repetitive (tp
≦
50us)
Drain Current
-Continuous
-Pulsed
Power Dissipation
- T
A
=25
o
C
o
-Derate Above 25
C
Symbol
V
DS
V
GS
V
GSM
I
D
I
DM
P
D
Rθ
JA
Tj, Tstg
T
L
Ratings
60
±20
±40
200
500
0.35
2.8
357
-55~+150
300
Unit
V
V
V
mA
mA
W
mW/
o
C
o
Thermal Resistance, Junction-To-Ambient
Operating Junction and Storage Temperature Range
Max. Lead Temperature For Soldering Purposes,
1/16" From Case For 10 Seconds
C
/W
o
C
C
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
