Elektronische Bauelemente
115 mAMPS, 60VOLTS, RDS(on)=7.5
Small Signal MOSFET
RoHS Compliant Product
2N7002W
A suffix of "-C" specifies halogen & lead-free
N–Channel SOT–323
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous
TC = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Symbol
VDSS
VDGR
ID
ID
IDM
Value
60
60
±115
±75
±800
Unit
Vdc
Vdc
mAdc
N–Channel
VGS
VGSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
556
300
2.4
R
θJA
TJ, Tstg
417
–55 to
+150
°C/W
°C
Unit
mW
mW/°C
°C/W
mW
mW/°C
3
1
2
2
R
θJA
PD
SOT–323
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
2
Gate
Source
SOT-323
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
1.800
1.150
K72 , 702 = Device Code
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
D
H
K
J
C
V
1
3
2
A
L
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
B S
G
All Dimension in mm
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2005 Rev.
A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
