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2SA1037 参数 Datasheet PDF下载

2SA1037图片预览
型号: 2SA1037
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅通用晶体管 [PNP Silicon General Purpose Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 371 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SA1037的Datasheet PDF文件第2页  
2SA1037
Elektronische Bauelemente
-0.15A, -60V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Excellent h
FE
linearity.
Complements of the 2SC2412
A
L
3
SOT-23
MECHANICAL DATA
Case: SOT-23, Molded Plastic
Weight: 0.008 grams(approx.)
1
3
Top View
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1037-Q
120~270
FQ
2SA1037-R
180~390
FR
2SA1037-S
270~560
FS
F
G
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
1
Base
Collector
3
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-6
-150
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
Min.
-60
-50
-6
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
140
4.0
Max.
-
-
-
-0.1
-0.1
-0.5
560
-
5.0
Unit
V
V
V
μA
μA
V
Test Conditions
I
C
=-50μA, I
E
=0
I
C
=-1μA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
= -6V, I
C
=0
I
C
=-50mA, I
B
=-5mA
V
CE
=-6V,I
C
=-1mA
MHz
pF
V
CE
=-12V, I
E
=-2mA, f=30MHz
V
CB
=-12V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
31-Dec-2010 Rev. C
Page 1 of 2