2SA1037AK
PNP Silicon
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
A
L
General Purpose Transistor
SC-59
Dim
A
1
Min
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
Max
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
FEATURES
S
2
3
Top View
B
B
C
D
G
H
J
K
n
RoHS Compliant Product.
Excellent h
FE
linearity.
Complments the 2SC2412K.
H
G
D
n
n
C
J
K
L
S
COLLECTOR
MARKING : FP, FQ, FR
*
BASE
EMITTER
O
All Dimension in mm
MAXIMUM RATINGS* T
A
=25 C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Value
-60
-50
-6
-150
200
-55~150
Units
V
V
V
mA
mW
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-60
-50
-6
-0.1
-0.1
120
560
-0.5
140
4
5
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
Ic=-50µA, I
E
=0
Ic=-1uA,I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-60V,I
E
=0
V
EB
=-6V,I
C
=0
V
CE
=-6V,I
C
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-12V,I
C
=-2mA,f=30MHz
V
CB
=-12V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
http://www.SeCoSGmbH.com
h
FE
P
120
-
270
Q
180 -
390
R
270
-
560
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
