2SA1201
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES
High voltage
High transition frequency
Complementary to 2SC2881
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Value
-120
-120
-5
-0.8
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test
conditions
MIN
-120
-120
-5
-0.1
-0.1
80
240
-1
-1
120
30
V
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-1mA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-1mA,I
C
=0
V
CB
=-120V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-5V,I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V,I
C
=-500mA
V
CE
=-5V,I
C
=-100mA
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
O
80-160
DO
Y
120-240
DY
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
08-May-2007 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
