2SA1577
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
A
L
3
1
2
1
3
Top View
2
B S
SOT-323
Dim
A
B
C
D
K
J
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
V
G
C
FEAT URES
Power dissipation
P
CM
Collector current
I
CM
: -500
Collector-base voltage
V
(BR)CBO
:
T
J
-40
mA
:
200
mW
D
H
G
H
J
K
L
S
V
COLLECTOR
3
Temp.=25
1
BASE
All Dimension in mm
2
EMITTER
V
to +150
o
Operating and storage junction temperature range
T
stg
: -55
ELECTRICAL
CHARACTERISTICS Tamb=25 C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
Test conditions
Ic=
-100µ
A,I
E
=0
Ic=
-1
mA,I
B
=0
I
E
=
-100µ
A,I
C
=0
V
CB
=
-20
V,I
E
=0
V
EB
=
-4
V,I
C
=0
V
CE
=
-3
V,I
C
=
-10
mA
I
C
=
-100
mA,I
B
=
-10
mA
V
CE
=
-5
V,I
C
=
-20
mA,f=100MHz
V
CB
=
-10
V,I
E
=0,f=
1
MHz
MIN
TYP
MAX
UNIT
V
V
V
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
-40
-32
-5
-1
-1
82
390
-0.4
200
7
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF
Rank
Range
Marking
http://www.SeCoSGmbH.com
h
FE(1)
P
82-180
HP
Q
120-270
HQ
R
180-390
HR
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
