2SA1576A
Elektronische Bauelemente
-0.15A, -60V
PNP Silicon Epitaxial Paner Transistors
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The 2SA1576A is designed for use in driver stage of
AF amplifier and general purpose amplificaion.
A
L
3
SOT-323
FEATURES
Complements of the 2SC4081
Excellent h
FE
Linearity
1
3
Top View
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1576A-Q
120~270
FQ
2SA1576A-R
180~390
FR
2SA1576A-S
270~560
REF.
F
G
H
J
FS
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
0.80
1.20
0.20
1.35
1.10
1.40
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
-
0.25
-
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
0.650 TYP.
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-6
-150
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-60
-50
-6
-
120
-
-
-
Typ.
-
-
-
-
-
-
140
4
Max.
-
-
-
0.1
0.1
560
-0.5
-
5
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-12V, I
C
=-2mA, f=30MHz
V
CB
=-12V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
07-Jan-2011 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
