2SA1586
Elektronische Bauelemente
-0.15 A, -50 V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain
High Voltage and High Current
Complementary to 2SC4116
Small Package
1
SOT-323
A
3
3
L
Top View
2
C B
1
2
APPLICATIONS
General Purpose Amplification
K
E
D
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SA1586-O
70~140
SO
2SA1586-Y
120~240
SY
2SA1586-GR(G)
200~400
SG
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Ratings
-50
-50
-5
-150
100
1250
150, -55~150
Unit
V
V
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
-50
-50
-5
-
-
70
-
80
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
400
-0.3
-
7
Unit
V
V
V
A
A
Test Conditions
I
C
= -100A, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -100A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -6V, I
C
= -2mA
V
MHz
pF
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -1mA
V
CB
= -10V, I
E
= 0, f = 1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
25-Jan-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
