2SA1774
Elektronische Bauelemente
-0.15A, -60V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low C
OB
. C
OB
=4.0pF
Complements the 2SC4617
A
M
3
SOT-523
3
CLASSIFICATION OF h
FE
1
Top View
2
C B
1
2
Product-Rank
Range
Marking
2SA1774-Q
120~270
FQ
2SA1774-R
180~390
FR
2SA1774-S
270~560
FS
K
E
L
D
F
REF.
G
Millimeter
Min.
Max.
1.5
1.7
1.45
1.75
0.75
0.85
0.7
0.9
0.9
1.1
0.15
0.25
H
REF.
G
H
J
K
L
M
J
Millimeter
Min.
Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25
0.325
PACKAGE INFORMATION
Package
SOT-523
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-60
-50
-6
-150
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
DC current gain
Transition frequency
Collector output capacitance
*
Pulse Test :Pulse Width
≤300us,D.C ≤
2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
Min.
-60
-50
-6
-
-
-
-
120
-
-
Typ.
-
-
-
-
-
-
-
-
140
3.5
Max.
-
-
-
-0.1
-0.1
-0.5
-1.2
560
-
5.0
Unit
V
V
V
μA
μA
V
V
Test Conditions
I
C
=-50μA, I
E
=0
I
C
=-1μA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
= -6V, I
C
=0
I
C
=-50mA, I
B
=-5mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-3V, I
C
=-1mA
MHz
pF
V
CE
=-12V, I
E
=-2mA, f=30MHz
V
CB
=-12V, I
E
=0, f=1MHz
31-Dec-2010 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
