2SA1797
Elektronische Bauelemente
PNP
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
FEATURES
High transition frequency
High power dissipation
A
4
1
2
3
C
PACKAGE DIMENSIONS
B
1
2
3
E
D
F
G
H
J
K
L
1. Base
2. Collector
3. Emitter
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
MARKING : AGX
X = hFE Rank Code
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-50
-50
-6
-2
0.5
150, -55~150
Unit
V
V
V
A
W
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Typical Transition frequency
Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
OB
Min.
-50
-50
-6
-
-
82
-
-
Typ.
Max.
-
-
-
-0.1
-0.1
270
-0.35
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
I
C
=-50µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5 V, I
C
=0
V
CE
=-2V, I
C
= -500mA
I
C
=-1A, I
B
= -50mA
V
CE
=-2V, I
C
=-500mA, f = 100MHz
V
CB
=-10V, I
E
=0, f=1MHz
200
36
CLASSIFICATION OF hFE2
Rank
Range
P
82 - 180
Q
120 - 270
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Oct-2009 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
