2SA562
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
-0.5A, -35V
PNP Plastic Encapsulated Transistor
FEATURES
Excellent h
FE
Linearity
G
H
TO-92
CLASSIFICATION OF h
FE
Product-Rank
Range
2SA562-O
70~140
2SA562-Y
120~240
A
B
REF.
J
D
1
Emitter
2
Collector
3
Base
K
E
C
F
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
-35
-30
-5
-500
500
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Min.
-35
-30
-5
-
-
70
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
200
13
Max.
-
-
-
-0.1
-0.1
240
-0.25
-1
-
-
Unit
V
V
V
µA
µA
V
V
MHz
pF
Test Conditions
I
C
= -100µA, I
E
= 0A
I
C
= -1mA, I
B
= 0A
I
E
= -100µA, I
C
= 0A
V
CB
= -35 V, I
E
= 0 A
V
EB
= -5 V, I
C
= 0 mA
V
CE
= -1V, I
C
= -100mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -1V , I
C
= -100mA
V
CE
= -6V, I
C
= -20mA
V
CB
= -6V, I
E
= 0A, f= 1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Jan-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
