2SA673, 2SA673A
Elektronische Bauelemente
PNP
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Low frequency amplifier
Complementary pair with 2SC1213 and 2SC1213A
G
H
TO-92
1
Emitter
2
Collector
3
Base
J
A
D
B
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
CLASSIFICATION OF h
FE(1)
Product-Rank
Product-Rank
Range
2SA673-B
2SA673A-B
60~120
2SA673-C
2SA673A-C
100~200
2SA673-D
2SA673A-D
160~320
E
K
C
F
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
2SA673
2SA673A
2SA673
2SA673A
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
-35
-50
-35
-50
-4
-500
400
150, -55~150
Unit
V
V
V
mA
mW
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown 2SA673
Voltage
2SA673A
Collector to Emitter
Breakdown Voltage
Collector Cut - Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
2SA673
2SA673A
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE (1)
h
FE (2)
*
V
CE(sat)
*
Min.
-35
-50
-35
-50
-4
-
60
10
-
-
Typ.
-
-
-
-
-
-
-
-
-
-0.64
Max.
-
-
-
-
-
-0.5
320
-
-0.6
-
Unit
V
V
V
µA
Test Conditions
I
C
= -10µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -20V, I
E
=0
V
CE
= -3V, I
C
=- 10mA
V
CE
= -3V, I
C
= -500mA
Emitter to Base Breakdown Voltage
V
V
I
C
= -150mA, I
B
= -15mA
V
CE
= -3V, I
C
= -10mA
Collector to Emitter Voltage
V
BE
* Pulse test: pulse width
≤300µs,
duty cycle≤ 2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. C
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
