2SB1132
Elektronische Bauelemente
PNP Silicon
Medium Power Transistor
SOT-89
D
Dimensions In Millimeters
Dimensions In Inches
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.060TYP
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
1.BASE
2.COLLECTOR
3.EMITTER
E1
D1
A
Symbol
A
b
b1
c
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
2.900
0.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
E
D
D1
E
E1
b1
*Features
Low power dissipation 0.5W
RoHS Compliant Product
b
L
e
e1
C
e
e1
L
3.100
1.100
0.114
0.035
0.122
0.043
*Stucture
Epitaxial planar type.
PNP silicon transistor.
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Tamb=25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
Test
unless otherwise specified
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-50
A,I
E
=0
Ic=
-1
mA,I
B
=0
I
E
=
-50
A,I
C
=0
V
CB
=
-20
V,I
E
=0
V
EB
=
-4
V,I
C
=0
V
CE
=
-3
V,I
C
=
-100
mA
I
C
=
-500
mA,I
B
=
-50
mA
V
CE
=
-5
V,I
C
=
-50
mA,f=
30
MHz
V
CB
=
-10
V,I
E
=0,f=
1
MHz
-40
-32
-5
-0.5
-0.5
82
390
-0.5
150
20
30
A
A
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
P
82-180
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
