2SB1198K
PNP Silicon
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
Top View
General Purpose Transistor
SC-59
Dim
A
B
C
D
D
Min
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
Max
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
S
FEATURES
2
B
1
G
H
C
J
K
G
Power dissipation
: 0.2
W
P
CM
Collector current
I
CM
: -0.5
A
*
Collector-base voltage
V
V
(BR)CBO
: -80
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
J
K
L
S
H
3
2
1
All Dimension in mm
COLLECTOR
3
2
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Tamb=25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
Test
unless otherwise specified
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-50
A,I
E
=0
Ic=
-2
mA,I
B
=0
I
E
=
-50
A,I
C
=0
V
CB
=
-50
V,I
E
=0
V
EB
=
-4
V,I
C
=0
V
CE
=
-3
V,I
C
=
-100
mA
I
C
=
-500
mA,I
B
=
-50
mA
V
CE
=
-10
V,I
C
=
-50
mA
V
CB
=
-10
V,I
E
=0,f=
1
MHz
-80
-80
-5
-0.5
-0.5
120
390
-0.5
180
11
A
A
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
