2SB1119/2SD1619
Elektronische Bauelemente
RoHS Compliant Product
D
D1
A
PNP Silicon
Medium Power Transistor
SOT-89
E1
FEATURES
Power dissipation
P
CM
: 500mW Tamb=25
1.BASE
Collector current
2.COLLECTOR
A
I
CM
: -1
3.EMITTER
Collector-base voltage
V
V
B(BR)CBO
: -25
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
b1
b
L
E
e
e1
C
Dimensions In Millimeters
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
2.900
0.900
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
3.100
1.100
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
Min
Dimensions In Inches
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.060TYP
0.114
0.035
0.122
0.043
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
ELECTRICAL CHARACTERISTICS
Tamb=25
unlessotherwise
specified CLASSIFICATION OF
h
FE(1)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
1
Test
conditions
I
E
=0
MIN
-25
-25
-5
TYP
MAX
UNIT
V
V
V
Ic=-10 A
I
C
= -1 mA , I
B
=0
I
E
= -10
A
I
C
=0
I
E
=0
V
CB
= -20 V ,
-0.1
-0.1
-0.1
100
40
-0.7
-1.2
180
25
A
A
A
V
CE
= -20 V , I
B
=0
V
EB
=-4V ,
I
C
=0
V
CE
= -2V, I
C
= -50mA
V
CE
=-2V, I
C
= -1A
I
C
=-0.5A,
I
C
=-0.5A,
V
CE
= -10V,
I
B
= -50mA
I
B
= -50mA
I
C
=-50mA
560
DC current gain
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
2
V
CE
(sat)
V
BE
(sat)
f
T
V
V
MHz
pF
Collector output capacitance
Marking 2SB1119 :
2SD1619 :
BB
DB
C
ob
V
CB
=-10V, f =
1MH
CLASSIFICATION OF h
FE(1)
Rank
Range
http://www.SeCoSGmbH.com
R
100-200
S
140-280
T
200-400
U
280-560
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
