2SB1386
Elektronische Bauelemente
-5A, -30V
PNP Silicon Low Frequency Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low V
CE
(sat)
Excellent DC current gain characteristics
Complements the 2SD2098
A
E
SOT-89
4
1
2
3
C
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SB1386-P
82~180
BHP
2SB1386-Q
120~270
BHQ
2SB1386-R
180~390
BHR
B
F
G
H
D
K
J
L
PACKAGE INFORMATION
Package
SOT-89
MPQ
1K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
1.2
0.89
0
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Ratings
-30
-20
-6
-5
-10
Unit
V
V
V
A(DC)
A(Pulse)
(1)
W
(2)
°C
0.5
2
150, -55~150
Note:
(1)
Single pulse, Pw=10ms.
(2)
When mounted on a 40⋅40⋅0.7 mm ceramic board.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain *
Transition frequency
Output Capacitance
∗Measured
using pulse current.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min.
-30
-20
-6
-
-
Typ.
-
-
-
-
-
-
-
120
60
Max.
-
-
-
-0.5
-0.5
-1.0
390
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=-50µA
I
C
= -1mA
I
E
= -50µA
V
CB
= -20V
V
EB
= -5V
I
C
/I
B
= -4A/-0.1A
V
CE
= -2V, I
C
= -0.5A
V
CE
= -6V, I
E
= -50mA, f=30MHz
V
CB
= -20V, I
E
=0, f=1MHz
V
CE(sat)
h
FE
f
T
C
OB
-
82
-
-
*
*
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
10-Dec-2010
Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
