2SB1412
Elektronische Bauelemente
RoHS Compliant Product
PNP Silicon
Low Frequency Transistor
Features
1)Low V
CE
(sat).
2)Excellent DC current gain characteristics
3)Complements the 2SD2118
6.6
5.3
0.2
0.2
0.1
D-Pack
2.3
0.5
0.1
0.1
!
Absolute maximum ratings
(Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CBO
V
CEO
V
EBO
I
C
−30
−20
−6
−5
−10
0.5
2
P
C
1
10
2SB1326
Junction temperature
Storage temperature
Tj
Tstg
1
150
−55
~
+150
V
V
V
0.2
2.5
A(Pulse)
∗
1
W
W
W
W(T
C
=
25
°C)
W
∗
3
∗
2
0.7
0.8
0.1
1.0
0.3
A(DC)
5.6
7.0
0.2
0.2
Parameter
Symbol
Limits
Unit
1.2
1.5Max
0.3
2SB1386
Collector power
dissipation
2SB1412
0.3
0.1
0.6
2.3
0.1
°C
°C
∗
1 Single pulse, Pw=10ms
∗
2 When mounted on a 40
×
40
×
0.7 mm ceramic board.
∗
3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm
2
or larger.
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
2SB1386,2SB1412
2SB1326
h
FE
f
T
Cob
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min.
−30
−20
−6
−
−
−
82
120
−
−
Typ.
−
−
−
−
−
−
−
−
120
60
Max.
−
−
−
−0.5
−0.5
−1.0
390
390
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
I
C
=−50µA
I
C
=−1mA
I
E
=−50µA
V
CB
=−20V
V
EB
=−5V
I
C
/I
B
=−4A/−0.1A
V
CE
=−2V,
I
C
=−0.5A
V
CE
=−6V,
I
E
=50mA,
f=30MHz
V
CB
=−20V,
I
E
=0A,
f=1MHz
Conditions
V
CE(sat)
∗
∗
∗
Transition frequency
Output capacitance
∗
Measured using pulse current.
!
Packaging specifications and h
FE
Package
Code
Type
2SB1386
2SB1412
2SB1326
h
FE
PQR
PQR
QR
−
−
−
Basic ordering
unit (pieces)
T100
1000
Taping
TL
2500
−
TV2
2500
−
−
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
