2SB562
Elektronische Bauelemente
0.9 W, -1 A, -25 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low frequency power amplifier
Complementary pair with 2SD468
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
J
, T
STG
Ratings
-25
-20
-5
-1
0.9
+150, -55 ~ +150
Unit
V
V
V
A
W
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE
h
FE(1)
f
T
Cob
Min.
-25
-20
-5
-
-
-
-
85
-
-
Typ.
-
-
-
-
Max.
-
-
-
-1
-1
Unit
V
V
V
μA
μA
V
V
I
C
=-10
μA,
I
E
= 0
I
C
=-1 mA, I
B
= 0
I
E
=-10
μA,
I
C
= 0
V
CB
=-20 V, I
E
= 0
V
EB
=-4 V, I
C
= 0
Test Conditions
-
-
-
350
38
-0.5
-1
240
-
-
I
C
=-0.8A, I
B
=-0.08A
V
CE
=-2V, I
C
=-0.5A
V
CE
=-2V, I
C
=-0.5A
MHz
pF
V
CE
= -2V, I
C
= -0.5 A
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85 -170
C
120 - 240
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-June-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
