2SB709A
Elektronische Bauelemente
-0.2A , -45V
PNP Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
For general amplification
Complementary of the 2SD601A
A
L
3
SOT-23
3
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SB709A-Q
160~260
BQ1
2SB709A-R
210~340
BR1
2SB709A-S
290~460
BS1
F
1
Top View
2
C B
1
2
K
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-45
-45
-7
-100
200
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
V
CE(sat)
h
FE
f
T
C
ob
Min.
-45
-45
-7
-
-
-
160
60
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-100
-0.5
460
-
2.7
Unit
V
V
V
μA
μA
V
Test Conditions
I
C
= -10μA, I
E
=0
I
C
= -2mA, I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -20V, I
E
=0
V
CE
= -10V, I
B
=0
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -2mA
MHz
pF
V
CE
= -10V, I
C
= -1mA, f=200MHz
V
CB
= -10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. B
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
