2SC1213 & 2SC1213A
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
600
Collector Current I
C
(mA)
100
Typical Output Characteristics (1)
1.0 0.9
0.8
80
0.7
0.6
0.5
P
C
400
=
60
40
0
m
W
40
0.4
0.3
200
20
0.2
0.1 mA
I
B
= 0
0
100
150
50
Ambient Temperature Ta (°C)
0
6
8
10
2
4
Collector to Emitter Voltage V
CE
(V)
500
Collector Current I
C
(mA)
400
Collector Current I
C
(mA)
300
Typical Output Characteristics (2)
10 9
8
7
6
5
4
3
2
Typical Transfer Characteristics
30
V
CE
= 3 V
10
200
1 mA
P
C
= 400
mW
I
B
= 0
0
6
8
10
2
4
Collector to Emitter Voltage V
CE
(V)
1.0
100
0.3
0
0.2
0.4 0.6 0.8 1.0
1.2
Base to Emitter Voltage V
BE
(V)
DC Current Transfer Ratio vs.
Collector Current
140
DC Current Transfer Ratio h
FE
120
100
80
60
40
20
0
V
CE
= 3 V
Ta = 25°C
2
5
10 20
50 100 200
Collector Current I
C
(mA)
500
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
25
–25
3
Ta = 75
°C
Page 2 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
