2SC1906
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
0.05 A , 30 V
NPN Plastic Encapsulated Transistor
FEATURES
High Transition Frequency
APPLICATIONS
VHF Amplifier
Mixer, Local Oscillator
TO-92
G
H
Emitter
Collector
Base
D
J
A
B
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
REF.
A
B
C
D
E
F
G
H
J
K
E
C
F
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
30
19
2
50
300
416
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
30
19
2
-
-
40
-
600
-
Typ.
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.5
0.5
-
1
-
2
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I
C
=0.01mA, I
E
=0
I
C
=3mA, I
B
=0
I
E
=0.01A, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=10V, I
C
=10mA
I
C
=20mA, I
B
=4mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. A
Page 1 of 1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
