2SC2412
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES
n
A
L
SOT-23
Dim
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
B
C
D
C
Low Cob.
Cob=2.0pF
Compements the 2SA1037K
RoHS Compliant Product
1
3
n
n
Top View
2
B S
n
V
G
STRUCTURE
n
G
H
K
J
n
Expitaxial planar type
NPN Silicon Teansistor
D
H
J
K
L
Collector
Base
Emitter
S
V
All Dimension in mm
!
Absolute maximum
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
7
0.15
Unit
V
V
V
A
Collector power dissipation
P
C
0.2
W
°C
°C
Junction temperature
Storage temperature
Tj
Tstg
150
−55~+150
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
7
−
−
120
−
−
−
Typ.
−
−
−
−
−
−
−
180
2
Max.
−
−
−
0.1
0.1
560
0.4
−
3.5
Unit
V
V
V
µA
µA
−
V
MHz
pF
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=60V
V
EB
=7V
Conditions
V
CE
=6V, I
C
=1mA
I
C
/I
B
=50mA/5mA
V
CE
=12V, I
E
=−2mA, f=100MHz
V
CE
=12V, I
E
=0A, f=1MHz
Output capacitance
h
FE
values are classified as follows :
Item
h
FE
Marking
Q
120~270
BQ
R
180~390
BR
S
270~560
BS
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
