2SC2712
Elektronische Bauelemente
NPN Silicon
General Purpose Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
FEATURES
*Power Dissipation
P
CM
:
150 mW (Tamb=25
o
C)
*Collector Current
I
CM
:
150 mA
*Collector-Base Voltage
V
(BR)CBO
:
60 V
*Operating and
Storage Junction Temperature Range
T
J
,T
STG
:
-55~+150 C
*RoHS Compliant Product
o
1
3
3
Collector
Base
Dim
A
B
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
1
2
Emitter
C
D
G
A
L
B S
H
J
K
L
S
V
C
2
Top View
G
V
All Dimension in mm
K
J
D
H
ELECTRICAL CHARACTERISTICS (Tamb=25
o
C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
unless otherwise specified)
Test
conditions
MIN
60
50
5
0.1
0.1
70
0.1
80
2.0
1.0
3.5
10
700
0.25
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
µA
µA
Ic= 100µA , I
E
=0
I
C
=1mA , I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 60 V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
= 100mA, I
B
=10mA
V
CE
=10V, I
C
= 1mA
V
CB
=10V, I
E
=0,f=1 MHz
V
CE
=6V,I
C
=0.1mA,f=1kHz,
Rg=10kΩ
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
1
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
