2SC2714
Elektronische Bauelemente
0.02A , 40V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
A
3
3
Small reverse Transfer Capacitance：Cre=0.7pF(typ.)
Low Noise Figure：NF=2.5dB(typ.)(f=100MHz)
L
Top View
C B
1
2
2
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC2714-R
40~80
QR
2SC2714-O
70~140
QO
2SC2714-Y
100~200
QY
F
K
1
E
D
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.04
2.10
2.55
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
J
Millimeter
Min.
Max.
0.09
0.18
0.45
0.60
0.08
0.177
0.6 REF.
0.89
1.02
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
REF.
G
H
J
K
L
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
40
30
4
20
100
125, -55~125
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Transition Frequency
Reverse Transfer Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Min.
40
30
4
-
-
40
-
-
-
Typ.
-
-
-
-
-
-
550
0.7
2.5
Max.
-
-
-
0.5
0.5
200
-
-
5
Unit
V
V
V
μA
μA
MHz
pF
dB
Test Condition
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=18V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=1mA, f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Mar-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
