2SC3052
Elektronische Bauelemente
NPN Silicon
Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
SOT-23
3.COLLECTOR
Dim
A
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
L
1.BASE
2.EMITTER
3
B
C
B S
2
FEATURES
n
Top View
1
D
G
H
J
K
L
S
V
Excellent linearity of DC forward current gain
RoHS Compliant Product
Low collector to emitter saturation voltage
V
CE(sat)
= 0.3V max (@I
C
=100mA, I
B
=10mA)
V
G
n
n
C
D
H
K
J
All Dimension in mm
MAXIMUM RATINGS*
T
A
=25 C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
50
50
6
0.2
150
o
Units
V
V
V
A
mW
o
125, -55~125
C
ELECTRICAL CH ARACTERIST ICS (Tam b = 25
o
C unless otherwise sp ecified )
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
Test conditions
Ic=100
µ
A, I
E
=0
Ic= 100
µ
A, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 50 V , I
E
=0
V
EB
= 6V , I
C
=0
V
CE
= 6V, I
C
= 1mA
V
CE
= 6V, I
C
= 0.1mA
I
C
= 100mA, I
B
= 10mA
I
C
= 100mA, I
B
= 10mA
V
CE
=6V , I
C
= 10mA
V
CE
=6V, I
E
= 0, f = 1 MHz
V
CE
=6V, I
E
= -0.1mA, f = 1KHz
R
G
=2KΩ
180
4
15
150
50
0.3
1
V
V
MHz
pF
dB
MIN
50
50
6
0.1
0.1
800
TYP
MAX
UNIT
V
V
V
µA
µA
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
CLASSIFICATION OF h
FE
Marking
Rank
Range
http://www.SeCoSGmbH.com
LE
E
150-300
LF
F
250-500
LG
G
400-800
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
