2SC3650
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
Epitaxial Planar Transistor
SOT-89
FEATURES
Low collector-emitter saturation voltage V
CE(sat)
High DC current gain
Large current capacity
LF amp, various drivers, muting circuit
MAXIMUM RATINGS (T
A
=25
o
C unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
25
15
1.2
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
ELECTRICAL CHARACTERISTICS (Tamb=25
o
C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
MARKING
CF
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=5V, I
C
=10 A
I
C
=500 A, I
B
=10mA
I
C
=500 A, I
B
=10mA
V
CE
=10 V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
220
17
600
0.5
1.2
V
V
MHz
pF
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
Test
I
C
=10
µA,
I
E
=0
I
C
=1mA, I
B
=0
I
E
=10
µA,
I
C
=0
V
CB
=20V, I
E
=0
V
EB
=10 V, I
C
=0
V
CE
=5V, I
C
=500mA
800
conditions
MIN
30
25
15
0.1
0.1
3200
TYP
MAX
UNIT
V
V
V
µA
µA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
08-May-2007 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
