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2SC4097 参数 Datasheet PDF下载

2SC4097图片预览
型号: 2SC4097
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑封装晶体管 [NPN Plastic-Encapsulate Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 991 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SC4097的Datasheet PDF文件第2页  
2SC4097
Elektronische Bauelemente
0.5A , 32V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High I
CMax
. I
CMax
=0.5A.
Low V
CE(sat)
. Optimal for low voltage operation.
Complementary to 2SA1577
1
SOT-323
A
L
3
3
Top View
2
C B
1
2
K
E
D
MECHANICAL DATA
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: See Diagrams Below
Mounting Position: Any
F
G
H
J
REF.
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC4097-P
82~180
CP
2SC4097-Q
120~270
CQ
2SC4097-Q
180~390
CR
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
Collector
3
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
40
32
5
500
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
40
32
5
-
-
82
-
-
-
Typ.
-
-
-
-
-
-
-
250
6
Max.
-
-
-
1
1
390
0.4
-
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=10mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=20mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. C
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