2SC4116
Elektronische Bauelemente
0.15A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-323
A
3
3
High voltage and high current.
Excellent h
FE
linearity.
High h
FE
.
Low noise.
Complementary to 2SA1586
L
Top View
1
2
C B
1
2
K
E
D
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SC-4116-O
70~140
LO
2SC-4116-Y 2SC-4116-GR 2SC-4116-BL
120~240
LY
200~400
LG
350~700
LL
F
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Base
Collector
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Rating
60
50
5
150
100
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Min.
60
50
5
-
-
70
-
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
700
0.25
-
3.5
10
Unit
V
V
V
μA
μA
V
GHz
pF
dB
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA, f=1KHz,
Rg=10KΩ
Any changes of specification will not be informed individually.
http://www.SeCoSGmbH.com/
10-Mar-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
