2SC5585
Elektronische Bauelemente
0.5A , 15V
NPN Silicon General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
High Current.
Low V
CE(sat)
. V
CE(sat)
≦0.25V
(@I
C
=200mA / I
B
=10mA)
Complement of 2SC4738.
A
M
3
SOT-523
3
Application
General Purpose Amplification.
1
Top View
2
C B
1
2
K
E
L
MARKING
BX
F
G
Millimeter
Min.
Max.
1.5
1.7
1.45
1.75
0.75
0.85
0.7
0.9
0.9
1.1
0.15
0.25
D
H
Millimeter
Min.
Max.
-
0.1
0.55 REF.
0.1
0.2
-
0.5 TYP.
0.25
0.325
J
PACKAGE INFORMATION
Package
SOT-523
MPQ
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
REF.
G
H
J
K
L
M
Collector
3
1
Base
Emitter
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
15
12
6
500
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Min.
15
12
6
-
-
270
-
-
-
Typ.
-
-
-
-
-
-
-
320
7.5
Max.
-
-
-
0.1
0.1
680
0.25
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=10mA
I
C
=200mA, I
B
=10mA
V
CE
=2V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
24-Feb-2011 Rev. B
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
