2SD1664
Elektronische Bauelemente
R o H S C o m p lia n t P ro d u c t
D
D1
A
NPN Silicon
General Purpose Transistor
Features
SOT-89
E1
b1
1
L
Power dissipation
P
CM
: 0.5 W (Tamb= 25 C)
Collector current
I
CM
: 1 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating & Storage junction Temperature
T
j
, T
stg
: -55 C~ +150 C
O
O
2
3
o
e
e1
b
C
1.BASE
2.COLLECTOR
3.EMITTER
Dimensions In Millimeters
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
2.900
0.900
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
3.100
1.100
0.114
0.035
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.060TYP
0.122
0.043
Dimensions In Inches
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
Electrical Characteristics( Tamb=25
O
C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(
sat
)
Test Conditions
Ic= 50
A I
E
=0
MIN
40
32
5
0.5
0.5
82
390
0.4
150
V
MHz
TYP
MAX
UNIT
V
V
V
A
A
Ic= 1mA I
B
=0
I
E
= 50 A I
C
=0
V
CB
= 20 V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 3V, I
C
= 0.1A
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V , I
C
= 50mA
f
T
C
ob
f=
1MHz
V
CB
= 10V, I
E
= 0
E
Output Capacitance
f=
1MHz
15
pF
Classification of h
FE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
