2SD1760
Elektronische Bauelemente
3A , 60V
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
D-Pack (TO-252)
Low V
CE(sat)
. V
CE(sat)
= 0.5V(Typ.) (I
C
/I
B
= 2A / 0.2A)
Complements the 2SB1184
CLASSIFICATION OF h
FE
Product-Rank
Range
2SD1760-P
82~180
2SD1760-Q
120~270
2SD1760-R
180~390
GE
A
B
C
D
PACKAGE INFORMATION
K
HF
Package
TO-252
MPQ
2.5K
Leader Size
13’ inch
M
J
N
O
P
Collector
REF.
Base
Emitter
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Ratings
60
50
5
3
1.5
150
-55 ~ 150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
OB
Min.
60
50
5
-
-
82
-
-
-
Typ.
-
-
-
-
-
-
-
90
40
Max.
-
-
-
1
1
390
1
-
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=500mA
I
C
=2A, I
B
=200mA
V
CE
=5V, I
C
=500mA, f=30MHz
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
28-Mar-2011 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
