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2SD1819A 参数 Datasheet PDF下载

2SD1819A图片预览
型号: 2SD1819A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN塑封装晶体管 [NPN Plastic-Encapsulate Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 339 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号2SD1819A的Datasheet PDF文件第2页  
2SD1819A
Elektronische Bauelemente
24
0.1A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain.
Low collector to emitter saturation voltage V
CE(sat)
.
Complementary to 2SB1218A
A
L
3
SOT-323
3
Top View
C B
1
2
2
APPLICATION
General purpose amplification.
1
K
E
D
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SD1819A-Q 2SD1819A-R 2SD1819A-S
160~260
ZQ
210~340
ZR
290~460
ZS
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Base
Collector
3
1
Emitter
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
60
50
7
100
150
833
150, -55~150
Unit
V
V
V
mA
mW
° /W
C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Base Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
f
T
C
ob
Min.
60
50
7
-
-
-
160
90
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
3.5
Max.
-
-
-
0.1
100
0.1
460
-
0.3
-
-
Unit
V
V
V
µA
µA
µA
Test Conditions
I
C
=10µA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=10V, I
C
=2mA
V
CE
=2V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=2mA, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
V
MHz
pF
24-Feb-2011
Rev. B
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