2SD1949
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
FEATURES
A
SOT-323
L
3
Dim
A
B
B S
2
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
*
High current.(I
C
=5A)
*
Low saturation voltage, typically
V
CE
(sat)=0.1V at I
C
/ I
B
=150mA / 15mA
V
COLLECTOR
3
1
BASE
1
Top View
C
D
G
H
G
C
D
H
K
J
J
K
L
S
V
2
EMITTER
All Dimension in mm
MAXIMUM RATINGS*
T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
50
5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
unless
Test
otherwise
specified）
MIN
50
50
5
0.5
0.5
120
390
0.4
250
6.5
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
conditions
I
C
= 100µA , I
E
=0
I
C
=1mA ,
I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 30 V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=10mA
I
C
= 150mA, I
B
=15mA
V
CE
=5V, I
C
=20mA
f=100 MHz
V
CB
=10V, I
E
=0,f=1 MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
Q
120-270
YQ
R
180-390
YR
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
