2SD2098
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
Epitaxial Planar Transistor
SOT-89
Description
The 2SD2098 is an epitaxial planar
type NPN silicon transistor.
Features
* Excellent DC Current Gain Characteristics
* Low Saturation Voltage, Typically V
CE(SAT)
=0.25V
At I
C
/I
B
=4A/0.1A
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
=25 C
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)*
1
Total Power Dissipation
Junction and Storage Temperature
Parameter
Value
50
20
6
5
10
0.5 (2.0*
)
-55~+150
2
o
Units
V
V
V
A
A
W
O
I
C
I
CP
P
D
T
J,
T
stg
C
*1: Single pulse, PW=10ms
*2: When mounted on a 40*40*0.7mm ceramic board
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
o
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE
(sat)
Min
50
20
6
-
-
-
Typ.
-
-
-
-
-
0.25
-
Max
-
-
-
0.5
0.5
1
Unit
V
V
V
uA
uA
V
Test Conditions
I
C
=50µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50µA,I
C
=0
V
CB
=40V,I
E
=0
V
EB
=5V,I
C
=0
I
C
=4A,I
B
=0.1A
V
CE
= 2 V, I
C
=0.5 A
V
CE
= 6 V, I
C
=50mA,f=100MHz
V
CB
=20V , f=1MHz,I
E
=0
*h
FE
120
390
-
Gain-Bandwidth Product
fT
-
150
-
Output Capacitance
-
C
ob
30
* Measured under pulse condition. Pulse width
≦
300
µ
s, Duty Cycle
≦
2%
MH z
pF
Classification of hFE
Rank
Range
Q
120~270
R
180~390
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
