2SD2118
NPN Silicon
Elektronische Bauelemente
RoHS Compliant Product
General Purpose Transistor
D-Pack
FEATURES
6. 50
5. 30
0. 15
0. 10
2. 30
0. 51
0. 05
0. 10
C
5
0. 20
0. 10
•
Low Collector-to-Emitter Voltage (Typ. 0.25 V)
•
Excellent DC Current Gain Characteristics
0. 51
0
0. 10 1. 20
9. 70
0. 75
0. 10
5
5
0. 15
0. 6
0
9
0. 51
0. 80
0. 10
2. 30
0. 10
0. 60
2. 30
0. 10
0. 10
1. 60
B
C
E
MAXIMUM RATINGS*
(T
A
=25
o
C
unless otherwise
specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector
Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
STG
Ratings
50
20
6
5
1
- 55~+150
- 55~+150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25
C
unless otherwise specified)
O
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
h
FE
fT
C
ob
Min
50
20
6
-
-
-
120
-
-
Typ.
-
-
-
-
-
0.25
-
150
30
Max
-
-
-
0.5
0.5
1
390
-
-
Unit.
V
V
V
µA
µA
V
Test Conditions
I
C
=50µA, I
E
=0
I
C
=1mA,
I
B
=0
I
E
=50µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=4A, I
B
=100mA
V
CE
=2V, I
C
=500mA
MHz
pF
V
CE
=6V, I
C
=50mA,
f=100MHz
V
CB
=20V,
I
E
=0,
f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
Q
120-270
R
180-390
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
3
2. 70
0. 20
5. 50
0. 10
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
