2SD874A
Elektronische Bauelemente
1A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-89
Large collector power dissipation P
C
Low collector-emitter saturation voltage V
CE(sat)
Complementary to 2SB766A
B C
3
E
C
4
1
2
A
CLASSIFICATION OF h
FE (1)
Product-Rank
Range
Marking
2SD874A-Q
85~170
YQ
2SD874A-R
120~240
YR
2SD874A-S
170~340
YS
B
F
G
H
E
D
K
J
L
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.40
4.60
3.94
4.25
1.40
1.60
2.30
2.60
1.50
1.70
0.89
1.20
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.40
0.58
1.50 TYP
3.00 TYP
0.32
0.52
0.35
0.44
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
60
50
5
1
500
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Emitter-Base Breakdown Boltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
OB
Min.
60
50
5
-
-
85
50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
20
Max.
-
-
-
0.1
0.1
340
-
0.4
1.2
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test conditions
I
C
=10μA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4 V, I
C
=0
V
CE
=10V, I
C
= 500mA
V
CE
=5V, I
C
= 1A
I
C
=500mA, I
B
= 50mA
I
C
=500mA, I
B
= 50mA
V
CE
=10V, I
C
=50mA, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
23-Feb-2011 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
