A44
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
NPN Silicon
Plastic-Encapsulate Transistor
TO-92
FEATURES
*
High voltage
1
2
3
1 2
3
* High Reliability
1
MAXIMUM RATINGS*
T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
400
400
5
0.2
0.625
-55 to +150
Units
V
V
V
A
W
℃
1. EMITTER
2
2. BASS
3
.
COLLECTOR
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE (1)
DC current gain
H
FE(2)
H
FE(3)
H
FE(4)
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition
frequency
V
CE
(sat)
V
CE
(sat)
V
BE
(sat)
f
T
unless
Test
otherwise
specified)
TYP
MAX
UNIT
V
V
V
0.1
5
0.1
µA
µA
µA
conditions
MIN
400
400
5
Ic= 100µA , I
E
=0
I
C
= 1
mA ,
I
B
=0
I
C
=0
I
E
=100µA,
V
CB
=400 V, I
E
=0
V
CE
=400 V
V
EB
= 4V, I
C
=0
V
CE
=10V , I
C
=10 mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=100 mA
V
CE
=10V, I
C
=50 mA
I
C
=10 mA, I
B
=1mA
I
C
=50 mA, I
B
=5mA
I
C
=10 mA, I
B
= 1 mA
V
CE
=20V, I
C
=10mA
f =30MHz
50
80
70
60
80
300
0.2
0.3
0.75
V
V
V
MHz
CLASSIFICATION OF hFE
(1)
Rank
Range
http://www.SeCoSGmbH.com
A
80-100
B1
100-150
B2
150-200
C
200-300
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
