BAP64-05W
Elektronische Bauelemente
Small Signal General Purpose Pin Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low diode capacitance
Low diode forward resistance
Low series inductance
High voltage, current controlled
RF resistor for RF attenuators and switches
For applications up to 3 GHz
RF attenuators and switches
A
3
SOT-323
L
3
Top View
1
2
C B
1
2
K
E
D
PACKAGING INFORMATION
Weight: 0.0074 g (Approximate)
3
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
MARKING CODE
5W
1
2
MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified)
Parameter
Continuous Reverse Voltage
Continuous Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Junction, Storage Temperature
Symbol
V
R
I
F
P
D
R
θJA
T
J
, T
STG
Ratings
175
100
200
625
150, -65 ~ +150
Unit
V
mA
mW
°C
/ W
°C
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
Parameters
Forward Voltage
Reverse Voltage Leakage Current
Symbol
V
F
I
R
Min.
-
-
-
Typ.
-
-
0.52
0.37
0.23
20
10
2
0.7
1.55
1.4
Max.
1.1
10
1
-
-
0.35
40
20
3.8
1.35
-
-
Unit
V
μA
Test Conditions
I
F
= 50 mA
V
R
= 175 V
V
R
= 20 V
V
R
= 0, f = 1 MHz
V
R
= 1 V, f = 1 MHz
V
R
= 20 V, f = 1 MHz
I
F
= 0.5 mA, f = 100 MHz
I
F
= 1 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
When switched from
I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω;
measured at I
R
=3mA
Diode Capacitance
C
D
-
-
-
-
-
-
pF
Diode Forward Resistance
r
D
*
Ω
Charge Carrier Life Time
Series Inductance
τ
L
L
S
-
-
μS
nH
* Guaranteed on AQL basis: inspection level S4, AQL 1.0.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Jun-2005 Rev. A
Page 1 of 2
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
