BAS116
Elektronische Bauelemente
Voltage 0.1 A, 80 V
Surface Mount Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low leakage current applications
Medium speed witching times
PACKAGE DIMENSIONS
3
Collector
1
SOT-23
Dim
A
B
C
D
G
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Base
2
Emitter
A
L
3
H
K
2
J
J
K
C
Top View
1
B S
L
S
V
V
G
D
H
All Dimension in mm
MARKING:
JV
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
RRM
V
RWM
V
R
I
FM
P
D
T
J
, T
STG
Ratings
75
75
75
200
225
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Symbol
V
R
V
F1
V
F2
V
F3
V
F4
I
R
C
TOT
T
RR
Min.
75
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
2
-
Max.
-
0.9
1
1.1
1.25
5
-
3
Unit
V
V
V
V
V
nA
pF
uS
Test Conditions
I
R
= 100uA
I
F
= 1mA
I
F
= 10mA
I
F
= 50mA
I
F
= 150mA
V
R
= 75V
V
R
= 0V, f=1MHz
I
F
=I
R
=10mA,I
RR
=0.1×I
R
, R
L
=100Ω
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery Time
01-June-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
