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BAS70-05 参数 Datasheet PDF下载

BAS70-05图片预览
型号: BAS70-05
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装肖特基势垒二极管 [Surface Mount Schottky Barrier Diodes]
分类和应用: 二极管光电二极管
文件页数/大小: 2 页 / 87 K
品牌: SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
 浏览型号BAS70-05的Datasheet PDF文件第2页  
BAS70/-04/-05/-06
Elektronische Bauelemente
Surface Mount Schottky Barrier Diodes
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
SOT-23
A
L
·
·
·
Low Turn-on Voltage
Low Forward Voltage - 0.75V(Max) @ I F = 10 mA
Very Low Capacitance - Less Than 2.0pF @ 0V
For high speed switching application, circuit protection
Dim
A
B
C
D
G
H
C
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
Top View
B S
MECHANICAL DATA
V
G
·
·
·
·
·
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
1
2
3
J
K
J
D
H
K
L
S
V
All Dimension in mm
3
3
3
3
1
2
1
2
1
2
1
2
BAS70 Marking: K73, BE, 73
BAS70-04 Marking: K74, 74
BAS70-05 Marking: K75, 75
BAS70-06 Marking: K76, 76
MAXIMUM RATINGS
(T J = 150 C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25 C
Derate above 25 C
Operating Junction and Storage Temperature Range
Forward Continuous Current
Single Forward Current
t
v
10 m
Symbol
VR
PF
225
1.8
TJ, Tstg
I
FM
± 55 to +150
70
100
mW
mW/5C
O
O
Value
70
Unit
Volts
5C
O
mA
mA
I
FSM
ELECTRICAL
CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (IR = 10
µA)
Total Capacitance (VR = 0 V, f = 1.0 MHz)
Reverse Leakage (VR = 50 V)
(VR = 70 V)
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 15 mAdc)
Symbol
V(BR)R
CT
IR
VF
VF
VF
Min
70
Max
2.0
0.1
10
410
750
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
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