BC337/BC338
Elektronische Bauelemente
FEATURES
Power dissipation
P
CM
: 0.625
W（Tamb=25℃）
Collector current
I
CM
:
0.8
A
Collector-base voltage
V
(BR)CBO
: BC337 50
V
BC338 30
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
.
NPN Plastic-Encapsulate Transistors
RoHS Compliant Product
TO-92
A suffix of "-C" specifies halogen & lead-free
1
2
3
1 2 3
1. COLLECTOR
2. BASE
3
.
EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
Emitter-base breakdown voltage
Collector cut-off current
BC337
BC338
Collector cut-off current
BC337
BC338
Emitter cut-off current
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Symbol
V
CBO
Ic= -100µA , I
E
=0
50
30
I
C
= -10 mA , I
B
=0
V
V
V
V
V
V
CEO
45
25
V
EBO
I
CBO
I
E
= -10µA, I
C
=0
5
V
CB
= -45V, I
E
=0
V
CB
= -25V, I
E
=0
I
CEO
V
CE
= -40V, I
B
=0
V
CE
= -20 V, I
B
=0
V
EB
= -4 V, I
C
=0
V
CE
=-1V, I
C
= -100mA
V
CE
=-1V, I
C
= -300mA
I
C
=-500 mA, I
B
= -50 mA
I
C
= -500 mA, I
B
=-50 mA
V
CE
=1V, I
C
= 300mA
0.1
0.1
0.2
0.2
0.1
100
60
0.7
1.2
1.2
µA
µA
µA
µA
µA
630
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
V
V
Transition frequency
Collector Output Capacitance
f
T
Cob
V
CE
= -5V, I
C
= -10mA
f =
100MHz
V
CB
=10V,I
E
=0
f=1MHZ
210
15
MHz
pF
h
FE
CLASSIFICATION
Classification
h
FE1
http://www.SeCoSGmbH.com
16
100-250
25
160-400
40
250-630
Any changing of specification will not be informed individual
28-Jun-2007
Rev. A
Page
1
of
3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
