Elektronische Bauelemente
RoHS Compliant Product
BC556, B, C
BC557, A, B, C
BC558, A, B, C
TO-92
A suffix of "-C" specifies halogen & lead-free
FEATURES
PNP Transistor
Power dissipation
P
CM:
0.625
W (Tamb=25℃)
Collector current
-
0.1
A
I
CM:
Collector-base voltage
BC556
-80
V
V
CBO
:
BC557
-50
V
BC558
-30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
BC556
BC557
BC558
Collector-emitter breakdown voltage
BC556
BC557
BC558
Emitter-base breakdown voltage
Collector cut-off current
BC556
BC557
BC558
Collector cut-off current
BC556
BC557
BC558
Emitter cut-off current
BC556
BC557
BC558
DC current gain
BC556
BC557
BC558
BC557A/558A
BC556B/BC557B/BC558B
BC556C/BC557C/BC558C
I
EBO
V
EB
=
-5V,
I
C
=0
I
CEO
I
CBO
V
EBO
V
CEO
=
- 2mA
, I
B
=0
V
CBO
1
2
3
1 2
3
1. COLLECTOR
2. BASE
3
.
EMITTER
unless
Symbol
otherwise
Test
specified)
MIN
-80
MAX
UNIT
conditions
Ic=
-100µA
, I
E
=0
-50
-30
-65
-45
-30
V
V
I
E
=
-100µA,
I
C
=0
V
CB
=
-70V,
I
E
=0
V
CB
=
-45
V, I
E
=0
V
CB
=
-25V,
I
E
=0
V
CE
=
-60
V, I
B
=0
V
CE
=
-40
V, I
B
=0
V
CE
=
-25
V, I
B
=0
-6
-0.1
V
µA
-0.1
µA
-0.1
120
120
120
120
180
420
500
800
800
220
460
800
-0.3
-1
µA
h
FE(1)
V
CE
=-5V, I
C
=
-2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=-100 mA, I
B
=
-5mA
I
C
=
-100
mA, I
B
=-5mA
V
CE
=
-5V,
I
C
=
-10mA
V
V
Transition frequency
f
T
f =
100MHz
150
MHz
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
SECOS [ SECOS HALBLEITERTECHNOLOGIE GMBH ]
